Emerging Nanotechnologies -Test Defect Tolerance and by written by Katarzyna Radecka, Zeljko Zilic.

By written by Katarzyna Radecka, Zeljko Zilic.

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This example illustrates how rewrites could be targeted to remove just the parts of the circuit least tolerant of crossbar defects, thereby giving a range of options suitable for crossbars with different defect rates. , the different implementations of the adder circuit compute exactly the same logical function of 30 T. Hogg and G. Snider their possible inputs. An additional possibility is allowing some non-equivalent rewrites, particularly in conjunction with fault tolerance in a higher-level system architecture of which the molecular device is only one part [9].

The k junctions along the vertical wire that is connected to VDD are configured to “on” and are forward-biased. The outputs are “1” for a defect-free BUT. If a forward-biased diode is defective, the horizontal wire attached to it becomes “0”.

Wang and K. Chakrabarty Switch block 2 with 4 k switches Dataflow direction Nanoblock kxk Molecular switches nanoBlock nanoBlock nanoBlock nanoblock nanoBlock Molecular switch Dataflow direction (a) Half of a switchblock (b) A switchblock with four surrounding nanoblocks Fig. 4. Nanoblock connectivity [3] inside a switchblock, and 4k 2 cross-points can be formed. For SE nanoblocks, a switchblock is capable of providing four directions of data flow: west to south (WS), west to east (WE), north to east (NE), and north to south (NS).

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