Atomic Layer Deposition: Principles, Characteristics, and by Tommi Kaariainen, David Cameron, Marja?Leena Kaariainen,

By Tommi Kaariainen, David Cameron, Marja?Leena Kaariainen, Arthur Sherman(auth.)

Because the first version used to be released in 2008, Atomic Layer Deposition (ALD) has emerged as a strong, and infrequently most well liked, deposition know-how. the hot variation of this groundbreaking monograph is the 1st textual content to check the topic of ALD comprehensively from a pragmatic point of view. It covers ALD's software to microelectronics (MEMS) and nanotechnology; many vital new and rising purposes; thermal strategies for ALD development of nanometer thick motion pictures of semiconductors, oxides, metals and nitrides; and the formation of natural and hybrid materials.Content:
Chapter 1 basics of Atomic Layer Deposition (pages 1–31):
Chapter 2 Elemental Semiconductor Epitaxial motion pictures (pages 33–49):
Chapter three III?V Semiconductor motion pictures (pages 51–66):
Chapter four Oxide motion pictures (pages 67–159):
Chapter five Nitrides and different Compounds (pages 161–182):
Chapter 6 Metals (pages 183–206):
Chapter 7 natural and Hybrid fabrics (pages 207–213):
Chapter eight ALD functions and (pages 215–242):

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Sci. Technol. A 30, 010802 © 2012, American Vacuum Society. 16 A photograph of Beneq’s WCS 500 roll-to-roll ALD reactor. Photo courtesy and Copyright Beneq Oy 2013. 500 mm wide web based on this principle has been developed by Beneq Oy. 16. ALD coating head is situated below the processing drum. References 1. A. , New Jersey, 1987. 2. J. J. Giling, Mechanisms of the Chemical Vapor Deposition of Silicon, in Current Topics in Materials Science, Vol. I, ed. , North-Holland Publishing, 1978. 3. J Garcia, R Pitonak, R Weissenbacher and A Kopf, Surface & Coatings Technology 205, 2322 (2010).

T. S. Suntola, A. J. Pakkala and S. G. Lindfors, US patent No. 4,413,022 (1983). 36. J. S. Patent No. US2004067641A1 (2004). 37. E. R. Dickey and W. A. S. Patent No. US2007224348A1 (2007). Fundamentals of Atomic Layer Deposition 31 38. P. Poodt, D. C. Cameron, E. Dickey, S. M. George, V. Kuznetsov, G. N. Parsons, F. Roozeboom, G. Sundaram and A. Vermeer, J. Vac. Sci. Technol. A 30, 010802 (2012). 39. D. H. Levy, D. C. Freeman, S. F. Nelson, P. J. Cowdery-Corvan and L. M. Irving, Appl. Phys. Letts.

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